ESMT
AC OPERATING TEST CONDITIONS
(V
DD
=1.8V
±
0.1V, T
A
= -40 °C ~ 85 °C )
Parameter
Input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
1.8V
M52D16161A
Operation Temperature Condition -40
°
C~85
°
C
Value
0.9 x V
DDQ
/ 0.2
0.5 x V
DDQ
tr / tf = 1 / 1
0.5 x V
DDQ
See Fig.2
Unit
V
V
ns
V
Vtt =0.5x VDDQ
13.9K
50
Output
VOH(DC) = VDDQ-0.2V, IOH = -0.1mA
VOL(DC) = 0.2V, IOL = 0.1mA
Output
Z0=50
20 pF
10.6K
20 pF
(Fig.1) DC Output Load circuit
(Fig.2) AC Output Load Circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
@Operating
@Auto refresh
Last data in to new col. Address delay
Last data in to row precharge
Last data in to burst stop
Col. Address to col. Address delay
Number of valid output data
Symbol
t
RRD
(min)
t
RCD
(min)
t
RP
(min)
t
RAS
(min)
t
RAS
(max)
Row cycle time
t
RC
(min)
t
RFC
(min)
t
CDL
(min)
t
RDL
(min)
t
BDL
(min)
t
CCD
(min)
CAS latency=3
CAS latency=2
60
66
Version
-6
12
18
18
30
-7.5
15
22.5
22.5
37.5
100
67.5
67.5
1
2
1
1
2
1
80
80
-10
20
30
30
50
Unit
ns
ns
ns
ns
us
ns
ns
CLK
CLK
CLK
CLK
ea
1
1, 5
2
2
2
3
4
Note
1
1
1
1
Note:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
The earliest a precharge command can be issued after a Read command without the loss of data is CL+BL-2 clocks.
5. A new command may be given t
REF
after self refresh exit.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Sep. 2009
Revision
:
1.1
5/32
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
