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M52D16161A_1 参数 Datasheet PDF下载

M52D16161A_1图片预览
型号: M52D16161A_1
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16Bit的X 2Banks手机同步DRAM [512K x 16Bit x 2Banks Mobile Synchronous DRAM]
分类和应用: 动态存储器手机
文件页数/大小: 32 页 / 888 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D16161A  
Operation Temperature Condition -40°C~85°C  
Active/Precharge Power Down Mode @ CAS Latency=2, Burst Length=4  
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C L O C K  
* N o t e 2  
tSS  
tS S  
* N o t e 1  
tSS  
C K E  
*Not e3  
C S  
RA S  
CA S  
R a  
C a  
A D D R  
B A  
A10/AP  
R a  
tS H Z  
Qa0  
Qa2  
Qa1  
D Q  
W E  
D Q M  
Pr ech ar ge  
Pow er - D ow n  
E ntr y  
Row Active  
Read  
P r e c h a r g e  
Precharge  
Power-Down  
Exit  
Active  
Active  
Power-down  
Entry  
Power-down  
Exit  
:
D o n ' t c a r e  
*Note: 1.Both banks should be in idle state prior to entering precharge power down mode.  
2.CKE should be set high at least 1CLK+tss prior to Row active command.  
3.Can not violate minimum refresh specification. (32ms)  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Sep. 2009  
Revision : 1.1 24/32  
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