ESMT
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0
°C
~ 70
°C
)
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
Test Condition
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
OL
= 0mA, Page Burst
All Band Activated, t
CCD
= t
CCD
(min)
t
RC
≥
t
RC
(min)
TCSR range
2 Banks
Self Refresh Current
I
CC6
CKE
≤
0.2V
1 Bank
1/2 Bank
1/4 Bank
Deep Power Down
Current
I
CC7
CKE
≤
0.2V
45
50
45
40
35
M52D16161A
Version
-10
15
0.12
0.1
5.5
-15
20
Unit Note
I
CC1
I
CC2P
I
CC2PS
I
CC2N
mA
mA
mA
mA
1
1
1.5
1
10
5
25
25
70
75
65
55
45
10
45
50
45
40
35
20
20
70
75
65
55
45
mA
mA
mA
mA
mA
mA
1
2
I
CC4
I
CC5
°C
uA
uA
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May 2009
Revision
:
1.7
4/32
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
