ESMT
M52D16161A
Revision History
Revision
Date
Description
0.1
2004.10.15
ORIGINAL
1. Delete M12L16161A-8T
2. Delete CL=1 item
3. Modify tSAC spec.
0.2
2005.02.17
M12D16161A-10 tSAC=9ns (CL=3)
M12D16161A-10 tSAC=12ns (CL=2)
M12D16161A-15 tSAC=12ns (CL=3)
M12D16161A-15 tSAC=12ns (CL=2)
1. Delete Preliminary
V1.0
2005.06.15
2. Add Pb-free to ordering information
3. Modify typing error of page4
V1.1
V1.2
V1.3
2005.09.06
2005.11.04
2005.11.16
Add ICC2P ; ICC2N ; ICC2NS; ICC3P ; ICC3PS; ICC3NS SPEC
Modify tRC(-10T) spec from 70ns to 80ns
Add 60 Ball VFBGA
Modify part no. from M12D1616A to M52D1616A at every
page
V1.4
2006.04.17
Delete BGA 球型陣列標示
V1.5
V1.6
2007.04.24
2007.06.22
Modify pin name A11 => BA
1. Correct the voltage of absolute maximum ratings
2. Correct Power Up Sequence for EMRS and add the
chart of EMRS
V1.7
2009.05.11
3. Add the chart of Deep Power Down Mode
4. Modify rhe description about self refresh opearation
Elite Semiconductor Memory Technology Inc.
Publication Date : May 2009
Revision : 1.7 31/32