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M52D16161A_09 参数 Datasheet PDF下载

M52D16161A_09图片预览
型号: M52D16161A_09
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16Bit的X 2Banks手机同步DRAM [512K x 16Bit x 2Banks Mobile Synchronous DRAM]
分类和应用: 动态存储器手机
文件页数/大小: 32 页 / 871 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D16161A  
Revision History  
Revision  
Date  
Description  
0.1  
2004.10.15  
ORIGINAL  
1. Delete M12L16161A-8T  
2. Delete CL=1 item  
3. Modify tSAC spec.  
0.2  
2005.02.17  
M12D16161A-10 tSAC=9ns (CL=3)  
M12D16161A-10 tSAC=12ns (CL=2)  
M12D16161A-15 tSAC=12ns (CL=3)  
M12D16161A-15 tSAC=12ns (CL=2)  
1. Delete Preliminary  
V1.0  
2005.06.15  
2. Add Pb-free to ordering information  
3. Modify typing error of page4  
V1.1  
V1.2  
V1.3  
2005.09.06  
2005.11.04  
2005.11.16  
Add ICC2P ; ICC2N ; ICC2NS; ICC3P ; ICC3PS; ICC3NS SPEC  
Modify tRC(-10T) spec from 70ns to 80ns  
Add 60 Ball VFBGA  
Modify part no. from M12D1616A to M52D1616A at every  
page  
V1.4  
2006.04.17  
Delete BGA 球型陣列標示  
V1.5  
V1.6  
2007.04.24  
2007.06.22  
Modify pin name A11 => BA  
1. Correct the voltage of absolute maximum ratings  
2. Correct Power Up Sequence for EMRS and add the  
chart of EMRS  
V1.7  
2009.05.11  
3. Add the chart of Deep Power Down Mode  
4. Modify rhe description about self refresh opearation  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May 2009  
Revision : 1.7 31/32  
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