欢迎访问ic37.com |
会员登录 免费注册
发布采购

M52D128168A-10BIG 参数 Datasheet PDF下载

M52D128168A-10BIG图片预览
型号: M52D128168A-10BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 47 页 / 1134 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M52D128168A-10BIG的Datasheet PDF文件第26页浏览型号M52D128168A-10BIG的Datasheet PDF文件第27页浏览型号M52D128168A-10BIG的Datasheet PDF文件第28页浏览型号M52D128168A-10BIG的Datasheet PDF文件第29页浏览型号M52D128168A-10BIG的Datasheet PDF文件第31页浏览型号M52D128168A-10BIG的Datasheet PDF文件第32页浏览型号M52D128168A-10BIG的Datasheet PDF文件第33页浏览型号M52D128168A-10BIG的Datasheet PDF文件第34页  
ESMT  
M52D128168A  
Operation Temperature Condition -40°C~85°C  
Note : 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.  
2. Bank active @ read/write are controlled by BA0~BA1.  
BA1  
BA0  
Active & Read/Write  
Bank A  
0
0
1
1
0
1
0
1
Bank B  
Bank C  
Bank D  
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command  
A10/AP  
BA1  
0
BA0  
0
Operating  
Disable auto precharge, leave A bank active at end of burst.  
Disable auto precharge, leave B bank active at end of burst.  
Disable auto precharge, leave C bank active at end of burst.  
Disable auto precharge, leave D bank active at end of burst.  
Enable auto precharge , precharge bank A at end of burst.  
Enable auto precharge , precharge bank B at end of burst.  
Enable auto precharge , precharge bank C at end of burst.  
Enable auto precharge , precharge bank D at end of burst.  
0
1
0
1
0
1
1
0
0
0
1
1
1
0
1
1
4. A10/AP and BA0~BA1 control bank precharge when precharge is asserted.  
A10/AP  
BA1  
0
BA0  
0
Precharge  
Bank A  
0
0
0
0
1
0
1
Bank B  
1
0
Bank C  
1
1
Bank D  
X
X
All Banks  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2008  
Revision: 1.0 30/47  
 复制成功!