ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
M24L816512DA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
Ambient
Temperature (T
A
)
−25°C
to +85°C
−40°C
to +85°C
V
CC
2.7V to 3.6V
2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range) [5, 6, 7, 8]
-55
Parameter
V
CC
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CE
Power-Down
Current
—CMOS Inputs
Automatic CE
Power-Down
Current
—CMOS Inputs
Test Conditions
Min.
I
OH
=
−0.1
mA
I
OL
= 0.1 mA
0.8*
V
CC
-0.4
-1
-1
11
2
2.7
V
CC
-
0.4
Typ
.[5]
3.0
Max.
3.6
Min.
2.7
V
CC
-
0.4
0.8*
V
CC
-0.4
-1
-1
11
2
-70
Typ.
[5]
Unit
Max.
3.6
V
V
0.4
V
CC
+0
.4V
0.4
+1
+1
17
5
mA
V
V
V
µA
µA
0.4
V
CC
+
0.4V
0.4
+1
+1
22
5
f=0
GND
≤
V
IN
< V
CC
GND
≤
V
OUT
≤
V
CC
, Output Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.6V
I
OUT
= 0mA
CMOS level
I
SB1
CE
≥
V
CC
−
0.2V, V
IN
≥
V
CC
−
0.2V, V
IN
≤
0.2V, f = f
MAX
(Address and Data
Only), f = 0
BLE
)
( OE ,
WE
,
BHE
and
V
CC
= 3.3V
V
CC
= 3.6V
100
400
100
400
µA
I
SB2
CE
≥
V
CC
−0.2V,
V
IN
≥
V
CC
−
0.2V or
V
IN
≤
0.2V,
f=0
100
55
110
55
100
110
µA
Capacitance[9]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
Thermal Resistance[9]
Parameter
ΘJA
ΘJC
Description
Thermal Resistance(Junction to Ambient)
Thermal Resistance (Junction to Case)
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/ JESD51.
BGA
55
17
Unit
°C/W
°C/W
Notes:
6.V
IH(MAX)
= V
CC
+ 0.5V for pulse durations less than 20 ns.
7.V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jul. 2008
Revision
:
1.1
3/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
