ESMT
M24L48512SA
Switching Characteristics (Over the Operating Range)[8] (continued)
–55
–60
–70
Parameter
Description
Unit
Min.
0
Max.
Min.
0
Max.
Min.
0
Max.
tSA
Address Set-up to Write Start
ns
ns
tPWE
40
40
45
WE Pulse Width
tSD
Data Set-up to Write End
Data Hold from Write End
25
0
25
0
25
0
ns
ns
ns
tHD
tHZWE
25
25
25
WE LOW to High Z[9, 10]
WE HIGH to Low Z[9, 10]
tLZWE
5
5
5
ns
Switching Waveforms
Read Cycle 1 (Address Transition Controlled) [12, 13, 14]
Read Cycle 2 (OE Controlled) [12, 14]
Notes:
13.Device is continuously selected. OE , CE = VIL.
14. WE is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.1 5/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
