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M24L48512SA-60BEG 参数 Datasheet PDF下载

M24L48512SA-60BEG图片预览
型号: M24L48512SA-60BEG
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8 )伪静态RAM [4-Mbit (512K x 8) Pseudo Static RAM]
分类和应用:
文件页数/大小: 12 页 / 274 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Switching Characteristics (Over the Operating Range)[8] (continued)
Parameter
t
SA
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
Description
Address Set-up to Write Start
WE
Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE
LOW to High Z[9, 10]
WE
HIGH to Low Z[9, 10]
M24L48512SA
–55
Min.
0
40
25
0
25
5
5
Max.
Min.
0
40
25
0
–60
Max.
Min.
0
45
25
0
25
5
–70
Max.
Unit
ns
ns
ns
ns
ns
ns
25
Switching Waveforms
Read Cycle 1 (Address Transition Controlled) [12, 13, 14]
Read Cycle 2 (
OE
Controlled) [12, 14]
Notes:
13.Device is continuously selected. OE , CE = V
IL
.
14.
WE
is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.1
5/12