ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[3, 4, 5] .......................................−0.4V to 3.7V
DC Input Voltage[3, 4, 5] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
M24L48512DA
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
Ambient Temperature (T
A
)
−25°C
to +85°C
−40°C
to +85°C
V
CC
2.7V to 3.6V
2.7V to 3.6V
Electrical Characteristics (Over the Operating Range)
Parameter
V
CC
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CE1
Power-down
Current —CMOS
Inputs
Automatic CE1
Power-down
Current —CMOS
Inputs
Test Conditions
Min.
2.7
V
CC
– 0.4
0.4
0.8 * V
CC
-0.4
GND
≤
V
IN
≤
Vcc
GND
≤
V
OUT
≤
Vcc, Output
Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.6V,
I
OUT
= 0 mA,
CMOS level
-1
-1
14 for 55ns speed
14 for 60 ns speed
8 for 70 ns speed
-55, 60, 70
Typ.[2]
3.0
Max.
3.6
Unit
V
V
V
V
V
µA
µA
mA
I
OH
=
−0.1
mA
I
OL
= 0.1 mA
V
CC
+ 0.4
0.4
+1
+1
22 for 55 ns speed
22 for 60 ns speed
15 for 70 ns speed
1 for all speed
5 for all speeds
I
SB1
CE1
≥
V
CC
−
0.2V, CE2
≤
0.2V, V
IN
≥
V
CC
−
0.2V, V
IN
≤
0.2V, f = f
MAX
(Address and Data
Only),
f=0
CE1
≥
V
CC
−
0.2V, CE2
≤
0.2V, V
IN
≥
V
CC
−
0.2V or V
IN
≤
0.2V, f = 0, V
CC
= 3.6V
150
250
µA
I
SB2
17
40
µA
Capacitance[6]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
Notes:
3.V
IH(MAX)
= V
CC
+ 0.5V for pulse durations less than 20 ns.
4.V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
5.Overshoot and undershoot specifications are characterized and are not 100% tested.
6.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.1
3/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
