ESMT
M24L48512DA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Latch-up Current ....................................................> 200 mA
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
Operating Range
Range
Ambient Temperature (TA) VCC
in High-Z State[3, 4, 5] .......................................−0.4V to 3.7V
DC Input Voltage[3, 4, 5] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Extended
Industrial
−25°C to +85°C
−40°C to +85°C
2.7V to 3.6V
2.7V to 3.6V
Electrical Characteristics (Over the Operating Range)
-55, 60, 70
Typ.[2]
3.0
Parameter
Description
Test Conditions
Unit
Min.
2.7
Max.
3.6
VCC
VOH
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
V
V
IOH = −0.1 mA
OL = 0.1 mA
VCC – 0.4
VOL
VIH
VIL
IIX
I
0.4
VCC + 0.4
0.4
V
V
0.8 * VCC
-0.4
-1
V
GND ≤ VIN ≤ Vcc
+1
µA
µA
GND ≤ VOUT ≤ Vcc, Output
Disabled
IOZ
-1
+1
14 for 55ns speed
14 for 60 ns speed
8 for 70 ns speed
22 for 55 ns speed
22 for 60 ns speed
15 for 70 ns speed
V
I
CC = 3.6V,
OUT = 0 mA,
CMOS level
f = fMAX = 1/tRC
f = 1 MHz
VCC Operating
Supply Current
ICC
mA
µA
1 for all speed 5 for all speeds
CE1 ≥ VCC − 0.2V, CE2 ≤
0.2V, VIN ≥ VCC − 0.2V, VIN
0.2V, f = fMAX(Address and Data
Automatic CE1
Power-down
Current —CMOS
Inputs
≤
ISB1
150
17
250
40
Only),
f = 0
Automatic CE1
Power-down
Current —CMOS
Inputs
CE1 ≥ VCC − 0.2V, CE2 ≤
0.2V, VIN ≥ VCC − 0.2V or VIN
≤ 0.2V, f = 0, VCC = 3.6V
ISB2
µA
Capacitance[6]
Parameter
CIN
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
Max.
8
8
Unit
pF
pF
COUT
Notes:
3.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
4.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
5.Overshoot and undershoot specifications are characterized and are not 100% tested.
6.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.1 3/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
