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M24L416256SA-60TIG 参数 Datasheet PDF下载

M24L416256SA-60TIG图片预览
型号: M24L416256SA-60TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )伪静态RAM [4-Mbit (256K x 16) Pseudo Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 317 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Product Portfolio
V
CC
Range(V)
Speed
(ns)
Max.
55
M24L416256SA
2.7
3.0
3.6
60
70
1
5
Operating, I
CC
(mA)
f = 1 MHz
Typ.[5]
Max.
M24L416256SA
Power Dissipation
Product
Min.
Standby, I
SB2
(µA)
Typ.[5]
Max.
f = fmax
Typ.[5]
14
8
Max.
22
15
Typ.[5]
17
40
Notes:
2. Ball H1, G2 and ball H6 for the VFBGA package can be used to upgrade to an 8-Mbit, 16-Mbit and 32-Mbit density, respectively.
3. NC “no connect” – not connected internally to the die.
4. DNU (Do Not Use) pins have to be left floating or tied to Vss to ensure proper application.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= VCC(typ.),
T
A
= 25°C.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
3/14