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M24L416256DA-70TEG 参数 Datasheet PDF下载

M24L416256DA-70TEG图片预览
型号: M24L416256DA-70TEG
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )伪静态RAM [4-Mbit (256K x 16) Pseudo Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 313 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Switching Waveforms (continued)
Write Cycle No. 1(
WE
Controlled)[12, 13, 17, 18, 19]
M24L416256DA
Notes:
17.Data I/O is high impedance if OE > V
IH
.
18.If Chip Enable goes INACTIVE simultaneously with
WE
=HIGH, the output remains in a high-impedance state.
19.During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.5
7/15