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M24L216128SA 参数 Datasheet PDF下载

M24L216128SA图片预览
型号: M24L216128SA
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 128K ×16 )伪静态RAM [2-Mbit (128K x 16) Pseudo Static RAM]
分类和应用:
文件页数/大小: 14 页 / 340 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M24L216128SA  
Product Portfolio Product  
Power Dissipation  
Operating ICC(mA)  
f = 1MHz f = fmax  
VCC Range (V)  
Product  
Speed(ns)  
Standby ISB2(µA)  
Min.  
2.7  
Typ.  
3.0  
Max.  
3.6  
Typ.[5]  
Max.  
Typ.[5]  
Max.  
22  
Typ. [5]  
9
Max.  
40  
55  
70  
14  
8
M24L216128SA  
Notes:  
1
5
15  
2.Ball D3, H1, G2 and ball H6 for the FBGA package can be used to upgrade to a 4-Mbit, 8-Mbit, 16-Mbit and a 32-Mbit density,  
respectively.  
3.NC “no connect”—not connected internally to the die.  
4.DNU (Do Not Use) pins have to be left floating or tied to Vss to ensure proper application.  
5.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.)  
,
TA = 25°C.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jul. 2008  
Revision : 1.2 3/14  
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