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M24L216128DA-70TIG 参数 Datasheet PDF下载

M24L216128DA-70TIG图片预览
型号: M24L216128DA-70TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 128K ×16 )伪静态RAM [2-Mbit (128K x 16) Pseudo Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 345 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Switching Characteristics Over the Operating Range (continued)[10]
Parameter
t
PWE
t
BW
t
SD
t
HD
t
HZWE
t
LZWE
Description
WE
Pluse Width
BLE
/
BHE
LOW to Write End
M24L216128DA
-55
Min.
40
50
25
0
25
5
5
Max.
Min.
55
55
25
0
-70
Max.
Unit
ns
ns
ns
ns
25
ns
ns
Data Set-Up to Write End
Data Hold from Write End
WE
LOW to High-Z[11, 12]
WE
HIGH to Low-Z[11, 12]
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[14, 15, 16]
Read Cycle 2 (
OE
Controlled)[14, 16]
Notes:
15. Device is continuously selected. OE , CE1 = V
IL
and CE2 = V
IH
.
16.
WE
is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jul. 2008
Revision
:
1.2
6/14