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M24L216128DA-55BEG 参数 Datasheet PDF下载

M24L216128DA-55BEG图片预览
型号: M24L216128DA-55BEG
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 128K ×16 )伪静态RAM [2-Mbit (128K x 16) Pseudo Static RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 14 页 / 345 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Product Portfolio Product
Product
Min.
M24L216128DA
2.7
V
CC
Range (V)
Speed(ns)
Max
3.6
55
70
Operating I
CC
(mA)
f = 1MHz
Typ.[5]
1
Max.
5
f = f
MAX
Typ.[5]
14
8
M24L216128DA
Power Dissipation
Standby I
SB2
(µA)
Typ. [5]
9
Max.
40
Typ.
3.0
Max.
22
15
Note:
2. Ball D3, H1, G2, H6 are the address expansion pins for the 4-Mb, 8-Mb, 16-Mb, and 32-Mb densities respectively.
3. NC “no connect”—not connected internally to the die.
4. DNU (Do Not Use) pins have to be left floating or tied to V
SS
to ensure proper application.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
(typ)
and T
A
= 25 °C .
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jul. 2008
Revision
:
1.2
3/14