ESMT
DC Specifications
Parameter
Operation Current
(One Bank Active)
Operation Current
(One Bank Active)
Precharge Power-down Standby
Current
Idle Standby Current
Active
Current
Power-down
Standby
Symbol
Test Condition
t
RC
= t
RC
(min) t
CK
= t
CK
(min)
Active – Precharge
Burst Length = 2 t
RC
= t
RC
(min), CL=
2.5 I
OUT
= 0mA, Active-Read-
Precharge
CKE
≤
V
IL
(max), t
CK
= t
CK
(min), All
banks idle
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
=
t
CK
(min)
All banks ACT, CKE
≤
V
IL
(max), t
CK
=
t
CK
(min)
One bank; Active-Precharge, t
RC
=
t
RAS
(max),
t
CK
= t
CK
(min)
Burst Length = 2, CL= 2.5 , t
CK
= t
CK
(min), I
OUT
= 0Ma
Burst Length = 2, CL= 2.5 , t
CK
= t
CK
(min)
t
RC
≥
t
RFC
(min)
CKE
≤
0.2V
Version
-5
130
M13S2561616A
Operation Temperature Condition -40~85°C
-6
120
Unit Note
IDD0
mA
IDD1
185
165
mA
IDD2P
IDD2N
IDD3P
30
60
50
25
55
45
mA
mA
mA
Active Standby Current
IDD3N
95
90
mA
Operation Current (Read)
Operation Current (Write)
Auto Refresh Current
Self Refresh Current
IDD4R
IDD4W
IDD5
IDD6
290
290
270
5
250
250
250
5
mA
mA
mA
mA
1
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
Input Crossing Point Voltage, CLK and CLK inputs
Symbol
V
IH
(AC)
V
IL
(AC)
V
ID
(AC)
V
IX
(AC)
0.7
0.5*V
DDQ
-0.2
Min
V
REF
+ 0.31
V
REF
- 0.31
V
DDQ
+0.6
0.5*V
DDQ
+0.2
Max
Unit
V
V
V
V
1
2
Note
Note1. V
ID
is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(V
DD
= 2.3V~2.7V, V
DDQ
=2.3V~2.7V, T
A
= 25 °C , f = 1MHz)
Parameter
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS ,
WE
)
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Symbol
C
IN1
C
IN2
C
OUT
C
IN3
Min
2.0
2.0
4.0
4.0
Max
3.0
3.0
5.0
5.0
Unit
pF
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
6/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
