ESMT
M13S2561616A
Operation Temperature Condition -40~85°C
Current State
Address
Command
Action
CS RAS CAS WE
H
L
L
X
H
H
X
H
H
X
H
L
X
DESEL
NOP
NOP (Continue Burst to end)
NOP (Continue Burst to end)
ILLEGAL
X
BA
Burst Stop
Terminate Burst With DM=High,
Latch CA, Begin Read, Determine
Auto-Precharge*3
L
L
H
H
L
L
H
L
BA, CA, A10
BA, CA, A10
READ/READA
Terminate Burst, Latch CA,
Begin new Write, Determine
Auto-Precharge*3
WRITE
WRITE/WRITEA
L
L
L
L
H
H
H
L
BA, RA
Active
Bank Active/ILLEGAL*2
Terminal Burst With DM=High,
Precharge
BA, A10
PRE / PREA
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
H
L
X
Refresh
MRS
ILLEGAL
Op-Code Mode-Add
ILLEGAL
X
H
H
H
H
L
X
H
H
L
X
H
L
X
DESEL
NOP
NOP (Continue Burst to end)
NOP (Continue Burst to end)
ILLEGAL
X
BA
Burst Stop
READ
H
L
BA, CA, A10
READ*7
READ with
AUTO
PRECHARGE
L
BA, CA, A10
WRITE
Active
ILLEGAL
H
H
L
H
L
BA, RA
Bank Active/ILLEGAL*2
ILLEGAL*2
L
BA, A10
PRE / PREA
Refresh
MRS
L
H
L
X
ILLEGAL
L
L
Op-Code Mode-Add
ILLEGAL
X
H
H
H
H
L
X
H
H
L
X
H
L
X
DESEL
NOP
NOP (Continue Burst to END)
NOP (Continue Burst to END)
ILLEGAL
X
BA
Burst Stop
READ
H
L
BA, CA, A10
BA, CA, A10
BA, RA
ILLEGAL
WRITE with
AUTO
PRECHARGE
L
WRITE
Active
Write
H
H
L
H
L
Bank Active/ILLEGAL*2
ILLEGAL*2
L
BA, A10
PRE / PREA
Refresh
MRS
L
H
L
X
ILLEGAL
L
L
Op-Code Mode-Add
ILLEGAL
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
29/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
