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M13S2561616A-4BG 参数 Datasheet PDF下载

M13S2561616A-4BG图片预览
型号: M13S2561616A-4BG
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16位×4银行双倍数据速率SDRAM [4M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 49 页 / 1315 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A  
Extended Mode Register Set (EMRS)  
The extended mode register stores the data enabling or disabling DLL. The default value of the extended mode register is not  
defined, therefore the extended mode register must be written after power up for enabling or disabling DLL. The extended mode  
register is written by asserting low on CS , RAS , CAS , WE and high on BA0 (The DDR SDRAM should be in all bank  
precharge with CKE already high prior to writing into the extended mode register). The state of address pins A0~A12 and BA1 in  
the same cycle as CS , RAS , CAS and WE going low is written in the extended mode register. The mode register contents  
can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state.  
A0 is used for DLL enable or disable. “High” on BA0 is used for EMRS. All the other address pins except A0 and BA0 must be set  
to low for proper EMRS operation. Refer to the table for specific codes.  
BA1 BA0 A12 A11 A10 A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
0
1
RFU : Must be set “0”  
D.I.C DLL  
Output Driver Strength Control  
A0  
0
DLL Enable  
Enable  
0
1
Normal  
Weak  
1
Disable  
BA1 BA0  
Operaing Mode  
MRS Cycle  
0
0
0
1
EMRS Cycle  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Sep. 2009  
Revision : 2.0 12/49