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M13S2561616A-5TIG2S 参数 Datasheet PDF下载

M13S2561616A-5TIG2S图片预览
型号: M13S2561616A-5TIG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 49 页 / 1245 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A (2S)  
Operation Temperature Condition -40°C~85°C  
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still  
referenced to VREF (or to the crossing point for CLK/ CLK ), and parameter specifications are guaranteed for the  
specified AC input levels under normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the  
range between VIL(AC) and VIH(AC).  
5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively  
switch as a result of the signal crossing the AC input level and will remain in that state as long as the signal does not  
ring back above (below) the DC input LOW (HIGH) level.  
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE  
0.2VDDQ is recognized as LOW.  
7. Enables on-chip refresh and address counters.  
8. IDD specifications are tested after the device is properly initialized.  
9. The CLK/ CLK input reference level (for timing referenced to CLK/ CLK ) is the point at which CLK and CLK cross;  
the input reference level for signals other than CLK/ CLK , is VREF  
.
10. The output timing reference voltage level is VTT.  
11. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not  
referenced to a specific voltage level but specify when the device output is no longer driving (tHZ), or begins driving  
(tLZ).  
12. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this  
parameter, but system performance (bus turnaround) will degrade accordingly.  
13. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this  
CLK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device.  
When no writes were previously in progress on the bus, DQS will be transitioning from High- Z to logic LOW. If a  
previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending  
on tDQSS  
.
14. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.  
15. For command/address input slew rate 1.0 V/ns  
16. For command/address input slew rate 0.5 V/ns and < 1.0 V/ns  
17. For CLK & CLK slew rate 1.0 V/ns  
18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be  
guaranteed by device design or tester correlation.  
19. Slew Rate is measured between VOH(AC) and VOL(AC).  
20. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device  
(i.e. this value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are =  
50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to  
crosstalk (tJIT(crosstalk)) into the clock traces.  
21. tQH = tHP - tQHS, where:  
t
HP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts  
for 1) The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one transition  
followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew  
and output pattern effects, and p-channel to n-channel variation of the output drivers.  
22. tDQSQ Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers  
for any given cycle.  
23. For each of the terms above, if not already an integer, round to the next highest integer.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2015  
Revision : 1.0 11/49