ESMT
DDR SDRAM
Features
Double-data-rate architecture, two data transfers per clock cycle
Bi-directional data strobe (DQS)
Differential clock inputs (CLK and CLK )
DLL aligns DQ and DQS transition with CLK transition
Four bank operation
CAS Latency : 2.5, 3, 4
Burst Type : Sequential and Interleave
Burst Length : 2, 4, 8
M13S2561616A (2S)
Operation Temperature Condition -40°C~85°C
4M x 16 Bit x 4 Banks
Double Data Rate SDRAM
All inputs except data & DM are sampled at the rising edge of the system clock (CLK)
Data I/O transitions on both edges of data strobe (DQS)
DQS is edge-aligned with data for READs; center-aligned with data for WRITEs
Data mask (DM) for write masking only
V
DD
= 2.5V
±
0.2V, V
DDQ
= 2.5V
±
0.2V
7.8us refresh interval
Auto & Self refresh
2.5V I/O (SSTL_2 compatible)
Ordering Information
Product ID
M13S2561616A -5TIG2S
M13S2561616A -6TIG2S
M13S2561616A -5BIG2S
M13S2561616A -6BIG2S
Max Freq.
200MHz (DDR400)
66 pin TSOPII
166MHz (DDR333)
2.5V
200MHz (DDR400)
60 Ball BGA
166MHz (DDR333)
Pb-free
V
DD
Package
Comments
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2015
Revision : 1.0
1/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
