ESMT
IDD Specifications
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
Version
-4
90
120
4
30
30
30
60
140
140
150
3
230
-5
80
110
4
30
30
25
55
130
130
140
3
220
M13S2561616A (2A)
Operation Temperature Condition -40°C~85°C
-6
70
100
4
30
30
20
50
120
120
130
3
210
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Input / Output Capacitance
Parameter
Input capacitance (A0~A12, BA0~BA1,
CKE, CS , RAS , CAS ,
WE
)
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Package
TSOP
BGA
TSOP
BGA
TSOP
BGA
TSOP
BGA
Symbol
C
IN1
Min
2.5
2
2.5
2
1.5
1
1.5
1
Max
4.5
4
4.5
4
3.5
3
3.5
3
Delta Cap
(max)
0.5
Unit
pF
pF
pF
pF
pF
pF
pF
pF
Note
1,4
C
IN2
0.25
1,4
C
OUT
0.5
1,2,3,4
Input capacitance (DM)
C
IN3
0.5
1,2,3,4
Notes:
1. These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and
DQS pins. This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameter is sampled. V
DDQ
= 2.5V
±
0.2V, V
DD
= 2.5V
±
0.2V. f=100MHz, T
A
=25°C, V
OUT
(DC) = V
DDQ
/2, V
OUT
(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to
facilitate trace matching at the board level).
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2012
Revision : 1.1
7/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
