ESMT
M13S2561616A (2A)
Operation Temperature Condition -40°C~85°C
Write with Auto Precharge (@ BL=8)
0
1
2
3
4
5
6
7
8
9
10
C L K
C L K
H I G H
C K E
C S
R A S
C A S
B A 0 , B A 1
BAa
BAa
A
1 0 /AP
R a
C a
A D D R
( A 0 ~ A n )
W E
t
D A L
A u t o p r e c h a r g e s t a r t
t
W R
t
R P
No t e1
D Q S
D Q
D a 5
D a 1 D a2
Da 4
D a 7
Da 0
D a 3
D a 6
D M
C O MM A N D
ACTIVE
WRITE
:
D o n ’ t c a r e
1 0 1 2 2 B 1 6 R . B
Note: 1. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2012
Revision : 1.1 35/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
