ESMT
M13S2561616A (2K)
Operation Temperature Condition -40°C~85°C
Read with Auto Precharge (@ BL=8)
0
1
2
3
4
5
6
7
8
9
10
C L K
C L K
H I G H
C K E
C S
R A S
C A S
B A 0 , B A 1
BAa
BAa
A
1 0 /A P
A D DR
( A 0 ~ A n )
C a
R a
W E
A u t o p r e c h a r g e s t a r t
R P
t
N o t e 1
D Q S ( C L = 2 )
D Q ( C L = 2 )
Q a 4 Q a 5
Q a 7
Q a 2
Qa 6
Q a 1
Q a 3
Q a 0
D Q S ( C L = 2 . 5 )
D Q ( C L = 2 . 5 )
Q a 4 Qa 5
Qa 6 Q a 7
Q a 2 Q a 3
Q a 1
Q a 0
D M
C O M M A N D
ACTIVE
READ
:
D o n ’ t c a r e
0 9 11 2 B 1 6 R . A
Note: 1. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
Elite Semiconductor Memory Technology Inc.
Publication Date : May 2010
Revision : 1.2 34/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
