ESMT
PIN CONFIGURATION (TOP VIEW)
(TSOPII 66L, 400milX875mil Body, 0.65mm Pin Pitch )
M13S2561616A (2K)
Operation Temperature Condition -40
°
C~85
°
C
BALL CONFIGURATION (TOP VIEW)
(BGA60, 8mmX13mmX1.2mm Body, 0.8mm Ball Pitch)
1
A
V
SSQ
2
DQ15
V
DDQ
V
SSQ
V
DDQ
V
SSQ
V
SS
CLK
A12
A11
A8
A6
A4
3
V
SS
DQ13
DQ11
DQ9
UDQS
UDM
CLK
CKE
A9
A7
A5
V
SS
7
V
DD
DQ2
DQ4
DQ6
LDQS
LDM
WE
RAS
BA1
A0
A2
V
DD
8
DQ0
V
SSQ
V
DDQ
V
SSQ
V
DDQ
V
DD
CAS
CS
BA0
A10/AP
9
V
DDQ
DQ1
DQ3
DQ5
DQ7
NC
B
DQ14
C
D
E
F
G
H
J
K
L
M
DQ12
DQ10
DQ8
V
REF
A1
A3
Pin Description
Pin Name
Function
Address inputs
- Row address A0~A12
- Column address A0~A8
A10/AP: AUTO Precharge
BA0, BA1: Bank selects (4 Banks)
Data-in/Data-out
Row address strobe
Column address strobe
Write enable
Ground
Power
Pin Name
Function
DM is an input mask signal for write data.
LDM corresponds to the data on DQ0~DQ7;
UDM correspond to the data on DQ8~DQ15.
Clock input
Clock enable
Chip select
Supply Voltage for DQ
Ground for DQ
Reference Voltage for SSTL_2
No connection
A0~A12,
BA0, BA1
LDM, UDM
DQ0~DQ15
RAS
CAS
WE
CLK, CLK
CKE
CS
V
DDQ
V
SSQ
V
REF
NC
V
SS
V
DD
Bi-directional Data Strobe.
LDQS, UDQS LDQS corresponds to the data on DQ0~DQ7;
UDQS correspond to the data on DQ8~DQ15.
Elite Semiconductor Memory Technology Inc.
Publication Date : May 2010
Revision : 1.2
3/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
