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M13S2561616A-6TIG2K 参数 Datasheet PDF下载

M13S2561616A-6TIG2K图片预览
型号: M13S2561616A-6TIG2K
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 49 页 / 1234 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A (2K)  
Operation Temperature Condition -40°C~85°C  
AC Timing Parameter & Specifications – continued  
-5  
-6  
Parameter  
Write recovery time  
Symbol  
Unit  
Note  
min  
15  
2
max  
min  
15  
2
max  
tWR  
tWTR  
ns  
tCK  
us  
tCK  
tCK  
tCK  
tCK  
ns  
tCK  
tCK  
ns  
Write data in to Read command delay  
Average periodic refresh interval  
Write preamble  
tREFI  
7.8  
7.8  
14  
12  
tWPRE  
tWPST  
tRPRE  
tRPST  
tWPRES  
tMRD  
0.25  
0.4  
0.9  
0.4  
0
0.25  
0.4  
0.9  
0.4  
0
Write postamble  
0.6  
1.1  
0.6  
0.6  
1.1  
0.6  
Read preamble  
Read postamble  
Clock to DQS write preamble setup time  
Mode Register Set command cycle time  
Exit self refresh to Read command  
Exit self refresh to non-Read command  
13  
23  
1
2
tXSRD  
tXSNR  
200  
75  
200  
75  
(tWR/tCK  
)
(tWR/tCK  
)
Auto Precharge write recovery+precharge time  
tDAL  
+
+
tCK  
(tRP/tCK  
)
(tRP/tCK)  
Notes:  
1. All voltages referenced to VSS  
.
2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply  
voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.  
3. The below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is  
not intended to be either a precise representation of the typical system environment nor a depiction of the actual load  
presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing  
reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a  
coaxial transmission line terminated at the tester electronics).  
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still  
referenced to VREF (or to the crossing point for CLK/ CLK ), and parameter specifications are guaranteed for the  
specified AC input levels under normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the  
range between VIL(AC) and VIH(AC).  
5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively  
switch as a result of the signal crossing the AC input level and will remain in that state as long as the signal does not  
ring back above (below) the DC input LOW (HIGH) level.  
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE  
0.2VDDQ is recognized as LOW.  
7. Enables on-chip refresh and address counters.  
8. IDD specifications are tested after the device is properly initialized.  
9. The CLK/ CLK input reference level (for timing referenced to CLK/ CLK ) is the point at which CLK and CLK cross;  
the input reference level for signals other than CLK/ CLK , is VREF  
.
Elite Semiconductor Memory Technology Inc.  
Publication Date : May 2010  
Revision : 1.2 10/49