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M13S2561616A-6TIG2S 参数 Datasheet PDF下载

M13S2561616A-6TIG2S图片预览
型号: M13S2561616A-6TIG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 49 页 / 1245 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A (2S)  
Operation Temperature Condition -40°C~85°C  
Basic Functionality  
Power-Up and Initialization Sequence  
DDR SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified  
may result in undefined operation. No power sequencing is specified during power up and power down given the following  
criteria:  
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„
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VDD and VDDQ are driven from a single power converter output, AND  
VTT is limited to 1.35 V, AND  
VREF tracks VDDQ /2  
OR, the following relationships must be followed:  
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„
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VDDQ is driven after or with VDD such that VDDQ < VDD + 0.3 V, AND  
VTT is driven after or with VDDQ such that VTT < VDDQ + 0.3 V, AND  
VREF is driven after or with VDDQ such that VREF < VDDQ + 0.3 V.  
At least one of these two conditions must be met.  
Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an  
LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee  
that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal operation (by a read  
access).  
After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200 μs delay prior  
to applying an executable command. Once the 200 μs delay has been satisfied, a DESELECT or NOP command should be  
applied, and CKE should be brought HIGH.  
Following the NOP command, a PRECHARGE ALL command should be applied. Next a MODE REGISTER SET command  
should be issued for the Extended Mode Register, to enable the DLL, and then a MODE REGISTER SET command should be  
issued for the Mode Register, to reset the DLL, and to program the operating parameters. 200 clock cycles are required  
between the DLL reset and any executable command. A PRECHARGE ALL command should be applied, placing the device in  
the ”all banks idle” state.  
Once in the idle state, two AUTO refresh cycles must be performed. Additionally, a MODE REGISTER SET command for the  
Mode Register, with the reset DLL bit deactivated (i.e., to program operating parameters without resetting the DLL) must be  
performed.  
Following these cycles, the DDR SDRAM is ready for normal operation.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2015  
Revision : 1.0 13/49