ESMT
DC Specifications
Version
Parameter
Operation Current
(One Bank Active)
Operation Current
(One Bank Active)
Precharge Power-down
Standby Current
Idle Standby Current
Active Power-down Standby
Current
Active Standby Current
Symbol
Test Condition
t
RC
= t
RC
(min) t
CK
= t
CK
(min)
Active – Precharge
Burst Length = 2 t
RC
= t
RC
(min),
CL= 2.5 I
OUT
= 0mA,
Active-Read- Precharge
CKE
≤
V
IL
(max), t
CK
= t
CK
(min),
All banks idle
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= t
CK
(min)
All banks ACT, CKE
≤
V
IL
(max),
t
CK
= t
CK
(min)
One bank; Active-Precharge, t
RC
= t
RAS
(max),
t
CK
= t
CK
(min)
Burst Length = 2, CL= 2.5 , t
CK
=
t
CK
(min), I
OUT
= 0Ma
Burst Length = 2, CL= 2.5 , t
CK
=
t
CK
(min)
t
RC
≥
t
RFC
(min)
CKE
≤
0.2V
-5
175
M13S128324A
Operation Temperature Condition -40~85°C
Unit
-6
145
-
mA
Note
-
-
IDD0
IDD1
190
180
mA
-
IDD2P
IDD2N
IDD3P
40
115
50
40
95
45
mA
mA
mA
-
-
-
IDD3N
120
110
mA
-
Operation Current (Read)
Operation Current (Write)
Auto Refresh Current
Self Refresh Current
IDD4R
IDD4W
IDD5
IDD6
350
380
270
3
300
330
250
3
mA
mA
mA
mA
-
-
-
1
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
Input Crossing Point Voltage, CLK and CLK inputs
Symbol
V
IH
(AC)
V
IL
(AC)
V
ID
(AC)
V
IX
(AC)
Min
V
REF
+ 0.35
-
0.7
0.5*V
DDQ
-0.2
Max
-
V
REF
- 0.35
V
DDQ
+0.6
0.5*V
DDQ
+0.2
Unit
V
V
V
V
Note
-
-
1
2
Note1. V
ID
is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of
the same.
Input / Output Capacitance
(V
DD
= 2.375V~2.75V, V
DDQ
=2.375V~2.75V, T
A
= 25 °C , f = 1MHz)
Parameter
Input capacitance(A0~A11, BA0~BA1, CKE,
CS
,
RAS
,
CAS
,
WE
)
Symbol
C
IN1
C
IN2
C
OUT
C
IN3
Min
1
1
1
1
Max
4
5
6.5
6.5
Unit
pF
pF
pF
pF
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.0
6/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
