ESMT
60 Ball BGA
1
A
B
C
D
E
F
G
H
J
K
L
M
V
SSQ
DQ14
DQ12
DQ10
DQ8
V
REF
M13S128168A
Operation temperature condition -40
°
C~85
°
C
2
DQ15
V
DDQ
V
SSQ
V
DDQ
V
SSQ
V
SS
CLK
NC
A11
A8
A6
A4
3
V
SS
DQ13
DQ11
DQ9
UDQS
7
V
DD
DQ2
DQ4
DQ6
LDQS
8
DQ0
V
SSQ
V
DDQ
V
SSQ
V
DDQ
V
DD
CAS
CS
BA0
A10/AP
9
V
DDQ
DQ1
DQ3
DQ5
DQ7
NC
UDM
CLK
CKE
A9
A7
A5
V
SS
LDM
WE
RAS
BA1
A0
A2
V
DD
A1
A3
Pin Description
(M13S128168A)
Pin Name
Function
Address inputs
- Row address A0~A11
- Column address A0~A8
A10/AP : AUTO Precharge
BA0, BA1 : Bank selects (4 Banks)
Data-in/Data-out
Row address strobe
Column address strobe
Write enable
Ground
Power
Bi-directional Data Strobe. LDQS
corresponds to the data on DQ0~DQ7;
UDQS correspond to the data on
DQ8~DQ15.
Pin Name
Function
DM is an input mask signal for write
data. LDM corresponds to the data
on DQ0~DQ7; UDM correspond to
the data on DQ8~DQ15.
Clock input
Clock enable
Chip select
Supply Voltage for GDQ
Ground for DQ
Reference Voltage for SSTL-2
A0~A11,
BA0,BA1
LDM, UDM
DQ0~DQ15
RAS
CAS
WE
CLK, CLK
CKE
CS
V
DDQ
V
SSQ
V
REF
NC
V
SS
V
DD
LDQS, UDQS
No connection
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.2
3/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
