ESMT
DC Specifications
Parameter
Operation Current
(One Bank Active)
Operation Current
(One Bank Active)
Precharge Power-down
Standby Current
Idle Standby Current
Active Power-down Standby
Current
Active Standby Current
Operation Current (Read)
Operation Current (Write)
Auto Refresh Current
Self Refresh Current
Symbol
Test Condition
t
RC
= t
RC
(min), t
CK
= t
CK
(min),
Active – Precharge
Burst Length = 2, t
RC
= t
RC
(min), CL= 2.5,
I
OUT
= 0mA, Active-Read- Precharge
CKE
≤
V
IL
(max), t
CK
= t
CK
(min),
All banks idle
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CK
= t
CK
(min)
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
All banks ACT, CKE
≤
V
IL
(max),
t
CK
= t
CK
(min)
One bank; Active-Precharge,
t
RC
= t
RAS
(max), t
CK
= t
CK
(min)
Burst Length = 2, CL= 3, t
CK
= t
CK
(min),
I
OUT
= 0 mA
Burst Length = 2, CL= 3, t
CK
= t
CK
(min)
t
RC
≥
t
RFC
(min)
CKE
≤
0.2V
100
300
300
300
5
55
-4
140
190
40
M13S128168A
Version
-5
140
175
40
-6
140
150
40
Unit Note
IDD0
IDD1
IDD2P
mA
mA
mA
IDD2N
100
100
95
mA
50
100
245
240
270
5
45
100
215
200
250
5
mA
mA
mA
mA
mA
mA
1
Note: 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
Input Crossing Point Voltage, CLK and CLK inputs
Symbol
V
IH
(AC)
V
IL
(AC)
V
ID
(AC)
V
IX
(AC)
0.7
0.5*V
DDQ
-0.2
Min
V
REF
+ 0.31
V
REF
- 0.31
V
DDQ
+0.6
0.5*V
DDQ
+0.2
Max
Unit
V
V
V
V
1
2
Note
Note: 1. V
ID
is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(V
DD
= 2.375V~2.75V, V
DDQ
=2.375V~2.75V, T
A
= 25 °C , f = 1MHz)
(V
DD
= 2.6V~2.8V, V
DDQ
=2.6V~2.8V, T
A
= 25 °C , f = 1MHz (for speed -4))
Parameter
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS ,
WE
)
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Elite Semiconductor Memory Technology Inc.
Symbol
C
IN1
C
IN2
C
OUT
C
IN3
Min
2.5
2.5
4.0
4.0
Max
3.5
3.5
5.5
5.5
Unit
pF
pF
pF
pF
Publication Date : Dec. 2008
Revision : 2.2
5/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
