ESMT
DC Specifications
Parameter
Operation Current
(One Bank Active)
Operation Current
(One Bank Active)
Precharge Power-down Standby
Current
Idle Standby Current
Active Power-down Standby
Current
Active Standby Current
Operation Current (Read)
Symbol
IDD0
IDD1
IDD2P
Test Condition
t
RC
= t
RC
(min) t
CK
= t
CK
(min)
Active – Precharge
Burst Length = 2 t
RC
= t
RC
(min), CL= 3,
I
OUT
= 0mA, Active-Read- Precharge
CKE
≤
V
IL
(max), t
CK
= t
CK
(min),
All banks idle
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CK
= t
CK
(min)
IDD3P
IDD3N
IDD4R
All banks ACT, CKE
≤
V
IL
(max),
t
CK
= t
CK
(min)
One bank; Active-Precharge,
t
RC
= t
RAS
(max), t
CK
= t
CK
(min)
Burst Length = 2, CL= 3 ,
t
CK
= t
CK
(min), I
OUT
= 0mA
Burst Length = 2, CL= 3 ,
t
CK
= t
CK
(min)
t
RC
≥
t
RFC
(min)
CKE
≤
0.2V
50
100
245
-5
140
175
40
M13S128168A
Operation temperature condition -40
°
C~85
°
C
Version
-6
140
150
40
Unit Note
mA
mA
mA
IDD2N
100
95
mA
45
100
215
mA
mA
mA
Operation Current (Write)
Auto Refresh Current
Self Refresh Current
IDD4W
IDD5
IDD6
240
270
5
200
250
5
mA
mA
mA
1
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
Input Crossing Point Voltage, CLK and CLK inputs
Symbol
V
IH
(AC)
V
IL
(AC)
V
ID
(AC)
V
IX
(AC)
0.7
0.5*V
DDQ
-0.2
Min
V
REF
+ 0.31
V
REF
- 0.31
V
DDQ
+0.6
0.5*V
DDQ
+0.2
Max
Unit
V
V
V
V
1
2
Note
Note1. V
ID
is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(V
DD
= 2.375V~2.75V, V
DDQ
=2.375V~2.75V, T
A
= 25 °C , f = 1MHz)
Parameter
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS ,
WE
)
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Symbol
C
IN1
C
IN2
C
OUT
C
IN3
Min
2.5
2.5
4.0
4.0
Max
3.5
3.5
5.5
5.5
Unit
pF
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.2
5/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
