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M13S128324A-6LG 参数 Datasheet PDF下载

M13S128324A-6LG图片预览
型号: M13S128324A-6LG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×32位×4银行双倍数据速率SDRAM [1M x 32 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 867 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128324A  
Write with Auto Precharge (@BL=8)  
0
1
2
3
4
5
6
7
8
9
10  
C L K  
C L K  
HIG H  
C K E  
C S  
R A S  
C A S  
BAa  
BAa  
R a  
R a  
B A 0 , B A 1  
A8 /AP  
C a  
A DD R  
( A0 ~ An )  
W E  
t
D A L  
A u t o p r e c h a r g e s t a r t  
t
W R  
t
R P  
No te1  
D Q S  
DQ  
Qa2  
Q a 5  
Q a 1  
Qa 4  
Q a7  
Qa 0  
Qa3  
Q a6  
DM  
CO MM A ND  
ACTIVE  
WRITE  
Note 1. The row active command of the precharge bank can be issued after tRP from this point.  
The new read/write command of another activated bank can be issued from this point.  
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May. 2007  
Revision : 1.8 37/49  
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