ESMT
M13S128324A
Write with Auto Precharge (@BL=8)
0
1
2
3
4
5
6
7
8
9
10
C L K
C L K
HIG H
C K E
C S
R A S
C A S
BAa
BAa
R a
R a
B A 0 , B A 1
A8 /AP
C a
A DD R
( A0 ~ An )
W E
t
D A L
A u t o p r e c h a r g e s t a r t
t
W R
t
R P
No te1
D Q S
DQ
Qa2
Q a 5
Q a 1
Qa 4
Q a7
Qa 0
Qa3
Q a6
DM
CO MM A ND
ACTIVE
WRITE
Note 1. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.8 37/49