ESMT
IDD Specifications
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
Version
-3.6
235
245
40
135
135
60
150
440
470
320
5
500
-4
210
220
40
120
120
55
130
400
430
290
5
460
-5
175
190
40
115
115
50
120
350
380
270
5
410
M13S128324A (2M)
-6
145
180
40
95
95
45
110
300
330
250
5
360
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Input / Output Capacitance
(V
DD
= 2.375V~2.625V, V
DDQ
=2.375V~2. 625V, T
A
= 25 °C , f = 1MHz)
(V
DD
= 2.5V~2.7V, V
DDQ
=2.5V~2.7V, T
A
= 25 °C , f = 1MHz (for speed -3.6))
Parameter
Input capacitance (A0~A11, BA0~BA1, CKE,
CS , RAS , CAS ,
WE
)
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Symbol
C
IN1
C
IN2
C
OUT
C
IN3
Min
1
1
1
1
Max
4
5
6.5
6.5
Unit
pF
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.3
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