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M13S128324A-3.6BG2M 参数 Datasheet PDF下载

M13S128324A-3.6BG2M图片预览
型号: M13S128324A-3.6BG2M
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, MO-205, FBGA-144]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 48 页 / 1147 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128324A (2M)  
AC Timing Parameter & Specifications - continued  
-3.6  
-4  
-5  
-6  
Symbol  
Unit  
Note  
Parameter  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Active to Precharge command  
tRAS  
tRC  
39.6  
70K  
40  
70K  
40  
70K  
42  
70K  
ns  
ns  
Active to Active /Auto Refresh  
command period  
54  
52  
68  
55  
70  
60  
72  
Auto Refresh to Active /Auto Refresh  
command period  
tRFC  
64.8  
ns  
Active to Read delay  
tRCDRD  
tRCDWR  
tRP  
14.4  
10  
15  
10  
15  
15  
10  
18  
18  
18  
ns  
ns  
ns  
Active to Write delay  
Precharge command period  
14.4  
15  
Active to Read with Auto Precharge  
command  
tRCDRD or  
t
t
RCDRD or  
RAS min  
t
t
RCDRD or  
RAS min  
tRCDRD or  
tRAP  
tRRD  
ns  
ns  
t
RAS min  
t
RAS min  
Active bank A to Active bank B  
command  
10  
10  
10  
12  
Write recovery time  
tWR  
tWTR  
15  
2
15  
2
15  
2
15  
2
ns  
tCK  
tCK  
us  
Write data in to Read command delay  
Col. Address to Col. Address delay  
Average periodic refresh interval  
Write preamble  
tCCD  
1
1
1
1
tREFI  
tWPRE  
tWPST  
tRPRE  
tRPST  
7.8  
7.8  
7.8  
7.8  
14  
12  
0.25  
0.4  
0.9  
0.4  
0.25  
0.4  
0.9  
0.4  
0.25  
0.4  
0.9  
0.4  
0.25  
0.4  
0.9  
0.4  
tCK  
tCK  
tCK  
tCK  
Write postamble  
0.6  
1.1  
0.6  
0.6  
1.1  
0.6  
0.6  
1.1  
0.6  
0.6  
1.1  
0.6  
Read preamble  
Read postamble  
Clock to DQS write preamble setup  
time  
tWPRES  
0
0
0
0
ns  
13  
Mode Register Set command cycle  
time  
tMRD  
tXSRD  
tXSNR  
2
2
2
2
tCK  
tCK  
ns  
Exit self refresh to Read command  
200  
75  
200  
75  
200  
75  
200  
75  
Exit self refresh to non-Read  
command  
(tWR/tCK  
)
(tWR/tCK  
)
Auto Precharge write recovery +  
precharge time  
(tWR/tCK  
+(tRP/tCK  
)
)
(tWR/tCK  
+(tRP/tCK  
)
)
tDAL  
tCK  
23  
+(tRP/tCK  
)
+(tRP/tCK  
)
Notes:  
1. All voltages referenced to VSS  
.
2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply  
voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.  
3. The below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not  
intended to be either a precise representation of the typical system environment nor a depiction of the actual load  
presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference  
load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial  
transmission line terminated at the tester electronics).  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.3 10/48