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M13S128168A-6TG 参数 Datasheet PDF下载

M13S128168A-6TG图片预览
型号: M13S128168A-6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行双倍数据速率SDRAM [2M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1492 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128168A  
Current State  
Address  
Command  
DESEL  
Action  
CS RAS CAS WE  
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
X
H
H
H
L
X
H
H
L
X
H
L
X
NOP (Idle after tRP  
)
)
X
NOP  
NOP (Idle after tRP  
ILLEGAL*2  
BA  
Burst Stop  
READ/WRITE  
Active  
X
H
L
BA, CA, A10  
ILLEGAL*2  
PRE-CHARGIN  
G
H
H
L
BA, RA  
ILLEGAL*2  
L
BA, A10  
PRE / PREA  
Refresh  
MRS  
NOP*4 (Idle after tRP  
ILLEGAL  
)
L
H
L
X
L
L
Op-Code Mode-Add  
ILLEGAL  
X
H
H
H
L
X
H
H
L
X
H
L
X
DESEL  
NOP (ROW Active after tRCD  
NOP (ROW Active after tRCD  
ILLEGAL*2  
ILLEGAL*2  
ILLEGAL*2  
ILLEGAL*2  
ILLEGAL  
)
X
NOP  
)
BA  
Burst Stop  
READ / WRITE  
Active  
X
H
L
BA, CA, A10  
ROW  
ACTIVATING  
H
H
L
BA, RA  
L
BA, A10  
PRE / PREA  
Refresh  
MRS  
L
H
L
X
L
L
Op-Code Mode-Add  
ILLEGAL  
X
H
H
H
H
L
X
H
H
L
X
H
L
X
DESEL  
NOP  
X
NOP  
NOP  
BA  
Burst Stop  
READ  
ILLEGAL*2  
ILLEGAL*2  
WRITE  
H
L
BA, CA, A10  
BA, CA, A10  
BA, RA  
WRITE  
RECOVERING  
L
WRITE  
H
H
L
H
L
Active  
ILLEGAL*2  
ILLEGAL*2  
ILLEGAL  
L
BA, A10  
PRE / PREA  
Refresh  
MRS  
L
H
L
X
L
L
Op-Code Mode-Add  
ILLEGAL  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2007  
Revision : 1.8 30/49  
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