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M13S128168A-6TG 参数 Datasheet PDF下载

M13S128168A-6TG图片预览
型号: M13S128168A-6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行双倍数据速率SDRAM [2M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1492 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128168A  
The Burst Stop command is a mandatory feature for DDR SDRAMs. The following functionality is required.  
1. The BST command may only be issued on the rising edge of the input clock, CLK.  
2. BST is only a valid command during Read burst.  
3. BST during a Write burst is undefined and shall not be used.  
4. BST applies to all burst lengths.  
5. BST is an undefined command during Read with autoprecharge and shall not be used.  
6. When terminating a burst Read command, the BST command must be issued LBST ( “BST Latency”) clock cycles before the  
clock edge at which the output buffers are tristated, where LBST equals the CAS latency for read operations.  
7. When the burst terminates, the DQ and DQS pins are tristated.  
The BST command is not byte controllable and applies to all bits in the DQ data word and the (all) DQS pin(s).  
DM masking  
The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle. Not read cycle. When the  
data mask is activated (DM high) during write operation, DDR SDRAM does not accept the corresponding data. (DM to data-mask  
latency is zero) DM must be issued at the rising or falling edge of data strobe.  
<Burst Length = 8>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
NO P  
NO P  
NO P  
NO P  
NO P  
NO P  
W R I T E  
NO P  
NO P  
C O M M A N D  
tD Q S S  
DQ S  
Din 4 Din 5  
Din 3  
Din 0 Din 1 Din 2  
Din 6 Din 7  
D Q ' s  
D M  
masked by DM = H  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2007  
Revision : 1.8 24/49  
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