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M13S128168A-6TG 参数 Datasheet PDF下载

M13S128168A-6TG图片预览
型号: M13S128168A-6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行双倍数据速率SDRAM [2M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1492 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128168A  
Read Interrupted by a Precharge  
A Burst Read operation can be interrupted by precharge of the same bank. The minimum 1 clock is required for the read to  
precharge intervals. A precharge command to output disable latency is equivalent to the CAS latency.  
<Burst Length = 8, CAS Latency = 3>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
1tC K  
Precharg e  
NO P  
NO P  
NO P  
R E A D  
NO P  
NO P  
NO P  
NO P  
C O M M A N D  
DQ S  
C A S L a t e n c y = 3  
Dout  
0
Dout  
2
Dout 4  
3 Dout  
Dout  
1
Dout  
5
Dout  
6 Dout 7  
D Q ' s  
I n t e r r u p t e d b y p r e c h a r g e  
When a burst Read command is issued to a DDR SDRAM, a Precharge command may be issued to the same bank before the  
Read burst is complete. The following functionality determines when a Precharge command may be given during a Read burst and  
when a new Bank Activate command may be issued to the same bank.  
1. For the earliest possible Precharge command without interrupting a Read burst, the Precharge command may be given on the  
rising clock edge which is CL clock cycles before the end of the Read burst where CL is the CAS Latency. A new Bank  
Activate command may be issued to the same bank after tRP (RAS precharge time).  
2. When a Precharge command interrupts a Read burst operation, the Precharge command may be given on the rising clock edge  
which is CL clock cycles before the last data from the interrupted Read burst where CL is the CAS Latency. Once the last  
data word has been output, the output buffers are tristated. A new Bank Activate command may be issued to the same bank  
after tRP  
.
3. For a Read with autoprecharge command, a new Bank Activate command may be issued to the same bank after tRP where tRP  
begins on the rising clock edge which is CL clock cycles before the end of the Read burst where CL is the CAS Latency.  
During Read with autoprecharge, the initiation of the internal precharge occurs at the same time as the earliest possible  
external Precharge command would initiate a precharge operation without interrupting the Read burst as described in 1 above.  
4. For all cases above, tRP is an analog delay that needs to be converted into clock cycles. The number of clock cycles between a  
Precharge command and a new Bank Activate command to the same bank equals tRP / tCK (where tCK is the clock cycle time)  
with the result rounded up to the nearest integer number of clock cycles.  
In all cases, a Precharge operation cannot be initiated unless tRAS(min) [minimum Bank Activate to Precharge time] has been  
satisfied. This includes Read with autoprecharge commands where tRAS(min) must still be satisfied such that a Read with  
autoprecharge command has the same timing as a Read command followed by the earliest possible Precharge command which  
does not interrupt the burst.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2007  
Revision : 1.8 19/49  
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