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M13S128168A-6TG 参数 Datasheet PDF下载

M13S128168A-6TG图片预览
型号: M13S128168A-6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行双倍数据速率SDRAM [2M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1492 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128168A  
Mode Register Definition  
Mode Register Set (MRS)  
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency,  
addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for variety  
of different applications. The default value of the register is not defined, therefore the mode register must be written after EMRS  
setting for proper DDR SDRAM operation. The mode register is written by asserting low on CS , RAS , CAS , WE and BA0  
(The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the mode register). The state of  
address pins A0~A11 in the same cycle as CS , RAS , CAS , WE and BA0 going low is written in the mode register. Two clock  
cycles are requested to complete the write operation in the mode register. The mode register contents can be changed using the  
same command and clock cycle requirements during operation as long as all banks are in the idle state. The mode register is  
divided into various fields depending on functionality. The burst length uses A0~A2, addressing mode uses A3, CAS latency (read  
latency from column address) uses A4~A6. A7 is used for test mode. A8 is used for DLL reset. A7 must be set to low for normal  
MRS operation. Refer to the table for specific codes for various burst length, addressing modes and CAS latencies.  
BA1 BA0 A11 A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
BT  
A2  
A1  
A0  
Address Bus  
Mode Register  
0
0
RFU  
DLL  
TM  
Burst Length  
CAS Latency  
A8  
DLL Reset  
No  
A7  
Mode  
Normal  
Test  
A3  
0
Burst Type  
Sequential  
Interleave  
0
1
0
1
Yes  
1
Burst Length  
Latency  
CAS Latency  
A2  
A1  
A0  
A6  
0
A5  
0
A4  
Latency  
Sequential Interleave  
BA1 BA0  
Operating Mode  
MRS Cycle  
0
1
1
1
0
1
Reserve  
Reserve  
3
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserve  
2
Reserve  
2
0
0
0
1
0
0
EMRS Cycle  
0
1
4
4
1
0
Reserve  
Reserve  
Reserve  
8
8
1
1
Reserve  
Reserve  
Reserve  
Reserve  
Reserve  
Reserve  
Reserve  
Reserve  
1
1
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2007  
Revision : 1.8 11/49