ESMT
Absolute Maximum Rating
Parameter
Voltage on V
DD
& V
DDQ
supply relative to V
SS
Voltage on inputs relative to V
SS
Voltage on I/O pins relative to V
SS
Operating ambient temperature
Storage temperature
Power dissipation
Short circuit current
Note:
Symbol
V
DD
, V
DDQ
V
INPUT
V
IO
T
A
T
STG
P
D
I
OS
M13S128168A (2N)
Value
-1.0 ~ 3.6
-1.0 ~ 3.6
-0.5 ~ V
DDQ
+0.5
0 ~ +70
-55 ~ +150
1
50
Unit
V
V
V
°C
°C
W
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operation Conditions & Specifications
DC Operation Conditions
Recommended operating conditions (Voltage reference to V
SS
= 0V)
Parameter
Supply voltage
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage (system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CLK and CLK inputs
Input Differential Voltage, CLK and CLK inputs
V–I Matching: Pullup to Pulldown Current Ratio
Input leakage current: Any input 0V
V
IN
V
DD
(All other pins not tested under = 0V)
Output leakage current (DQs are disable; 0V
V
OUT
V
DDQ
)
Symbol
V
DD
V
DDQ
V
REF
V
TT
V
IH
(DC)
V
IL
(DC)
V
IN
(DC)
V
ID
(DC)
VI (Ratio)
I
L
I
OZ
Min
2.3
2.3
0.49*V
DDQ
V
REF
- 0.04
V
REF
+ 0.15
-0.3
-0.3
0.36
0.71
-2
-5
Max
2.7
2.7
0.51*V
DDQ
V
REF
+ 0.04
V
DDQ
+ 0.3
V
REF
- 0.15
V
DDQ
+ 0.3
V
DDQ
+ 0.6
1.4
2
5
Unit
V
V
V
V
V
V
V
V
-
3
4
1
2
Note
A
A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2013
Revision : 1.2
4/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
