ESMT
M12S16161A
Operation Temperature Condition -40°C~85°C
DC CHARACTERISTICS
°C
(Recommended operating condition unless otherwise noted, TA = -40 to 85
CAS
Latency
Version
Parameter
Symbol
Test Condition
Unit Note
-6
-7
Burst Length = 1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA
Operating Current
(One Bank Active)
ICC1
115
100
mA
1
Precharge Standby
Current in power-down
mode
ICC2P
2
2
CKE ≤ VIL(max), tCC =15ns
mA
mA
ICC2PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =15ns
25
10
mA
ICC2N
Precharge Standby
Current in non
power-down mode
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
mA
mA
ICC2NS
ICC3P
10
10
CKE ≤ VIL(max), tCC =15ns
Active Standby Current
in power-down mode
ICC3PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
25
mA
ICC3N
Active Standby Current
in non power-down
mode
Input signals are changed one time during 2clks
All other pins ≥ VDD-0.2V or ≤ 0.2V
(One Bank Active)
CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞
Input signals are stable
10
mA
ICC3NS
IOL= 0Ma, Page Burst
3
mA
mA
1
2
135
135
135
120
120
120
Operating Current
(Burst Mode)
ICC4
All Band Activated, tCCD = tCCD (min)
2
Refresh Current
ICC5
ICC6
tRC ≥ tRC(min)
CKE ≤ 0.2V
mA
mA
Self Refresh Current
1
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 32ms. Addresses are changed only one time during tCC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2007
Revision : 1.0 4/30