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M12S16161A_1 参数 Datasheet PDF下载

M12S16161A_1图片预览
型号: M12S16161A_1
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16位X 2Banks同步DRAM [512K x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 30 页 / 622 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12S16161A  
Operation Temperature Condition -40°C~85°C  
Self Refresh Entry & Exit Cycle  
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C L O C K  
C K E  
* N o t e 2  
* N o t e 4  
tR C m i n  
* N o t e 6  
* N o t e 1  
*Note3  
tS S  
* N o t e 5  
C S  
RA S  
CA S  
* N o t e 7  
A D D R  
BA  
A10/AP  
H i - Z  
H i - Z  
D Q  
W E  
D Q M  
S e l f R e f r e s h E xi t  
S e l f R e f r e s h E n t r y  
A u t o R e f r e s h  
:
D o n ' t c a r e  
*Note: TO ENTER SELF REFRESH MODE  
1. CS ,RAS & CAS with CKE should be low at the same clock cycle.  
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.  
3. The device remains in self refresh mode as long as CKE stays “Low”.  
cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.  
TO EXIT SELF REFRESH MODE  
4. System clock restart and be stable before returning CKE high.  
5. CS Starts from high.  
6. Minimum tRC is required after CKE going high to complete self refresh exit.  
7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Sep. 2007  
Revision : 1.0 24/30  
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