ESMT
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0
°C
~ 70
°C
)
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
I
CC1
I
CC2P
I
CC2PS
I
CC2N
Test Condition
CAS
Latency
-6
130
M12S128168A
Version
-7
90
2
2
-10
60
Unit Note
mA
mA
mA
1
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
CKE
≤
V
IL
(max), t
CC
=10ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=10ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 2clks
All other pins
≥
V
DD
-0.2V or
≤
0.2V
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
OL
= 0Ma, Page Burst
All Band Activated, t
CCD
= t
CCD (min)
t
RC
≥
t
RC
(min), t
CC
=10ns
CKE
≤
0.2V
20
20
15
mA
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3P
I
CC3PS
I
CC3N
10
10
6
6
9
mA
mA
30
30
20
mA
I
CC3NS
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
I
CC4
I
CC5
I
CC6
20
150
210
110
180
2
80
180
mA
mA
1
mA
mA
2
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC(min)
.
2. Refresh period is 64ms. A maximum of eight consecutive AUTO REFRESH commands (with t
RFCmin
) can be posted to any
given SDRAM, and the maximum absolute interval between any AUTO REFRESH command and the next AUTO
REFRESH command is 8x15.6
μ
s.). Addresses are changed only one time during t
CC(min)
.
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2008
Revision: 1.1
5/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
