ESMT
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted)
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
Test Condition
CAS
Latency
M12S16161A (2Q)
Version
-5
100
2
2
25
-7
80
Unit Note
I
CC1
I
CC2P
I
CC2PS
I
CC2N
Burst Length = 1
t
RC
t
RC
(min), t
CC
t
CC
(min), I
OL
= 0mA
CKE
V
IL
(max), t
CC
=15ns
CKE
V
IL
(max), CLK
V
IL
(max), t
CC
=
CKE
V
IH
(min), CS
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
CKE
V
IL
(max), t
CC
=15ns
CKE
V
IL
(max), CLK
V
IL
(max), t
CC
=
CKE
V
IH
(min), CS
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 2clks
All other pins
V
DD
-0.2V or
≤
0.2V
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
I
OL
= 0mA, Page Burst
All Band Activated, t
CCD
= t
CCD
(min)
t
RFC
t
RFC
(min)
CKE
0.2V
3
2
mA
1
mA
mA
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3P
I
CC3PS
10
10
10
mA
mA
I
CC3N
25
mA
I
CC3NS
I
CC4
10
100
100
100
1
80
80
80
mA
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
mA
mA
mA
1
2
I
CC5
I
CC6
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Mar. 2012
Revision
:
1.0
4/28