欢迎访问ic37.com |
会员登录 免费注册
发布采购

M12L64322A_08 参数 Datasheet PDF下载

M12L64322A_08图片预览
型号: M12L64322A_08
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32位×4银行同步DRAM [512K x 32 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 47 页 / 785 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M12L64322A_08的Datasheet PDF文件第37页浏览型号M12L64322A_08的Datasheet PDF文件第38页浏览型号M12L64322A_08的Datasheet PDF文件第39页浏览型号M12L64322A_08的Datasheet PDF文件第40页浏览型号M12L64322A_08的Datasheet PDF文件第42页浏览型号M12L64322A_08的Datasheet PDF文件第43页浏览型号M12L64322A_08的Datasheet PDF文件第44页浏览型号M12L64322A_08的Datasheet PDF文件第45页  
ESMT  
M12L64322A  
Write interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full page  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
C L O C K  
C K E  
H I G H  
C S  
R A S  
C A S  
A D D R  
CA b  
CA a  
RA a  
BA1  
BA0  
RA a  
A10/AP  
tR D L  
* N o t e 1  
tB D L  
DAa4  
DAa2 DAa3  
DAa0  
DAa1  
DAb3 DAb4 DAb5  
DAb0 DAb1 DAb2  
D Q  
W E  
D Q M  
W ri t e  
(A - Ban k )  
Burst Stop  
W r i t e  
( A - Ban k )  
Row A c t i ve  
( A- B an k )  
Precharge  
( A- B an k )  
:D on' t C ar e  
*Note : 1. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by  
AC parameter of tRDL.  
DQM at write interrupted by precharge command is needed to prevent invalid write.  
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input  
data after Row precharge cycle will be masked internally.  
2. Burst stop is valid at every burst length.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Feb. 2008  
Revision: 2.4 41/47  
 复制成功!