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M12L64322A_08 参数 Datasheet PDF下载

M12L64322A_08图片预览
型号: M12L64322A_08
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32位×4银行同步DRAM [512K x 32 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 47 页 / 785 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L64322A  
Self refresh entry command  
CLK  
CKE  
( CS ,RAS , CAS , CKE = Low , WE = High)  
CS  
After the command execution, self refresh operation continues while CKE  
remains low. When CKE goes to high, the M12L64322A exits the self refresh mode.  
During self refresh mode, refresh interval and refresh operation are performed  
internally, so there is no need for external control.  
RAS  
CAS  
Before executing self refresh, all banks must be precharged.  
WE  
BA0, BA1  
(Bank select)  
A10  
Add  
Fig. 7 Self refresh entry  
command  
Burst stop command  
CLK  
H
CKE  
CS  
( CS , WE = Low, RAS , CAS = High)  
This command terminates the current burst operation.  
Burst stop is valid at every burst length.  
RAS  
CAS  
WE  
BA0, BA1  
(Bank select)  
A10  
Add  
Fig. 8 Burst stop command  
CLK  
No operation  
CKE  
H
CS  
RAS  
CAS  
WE  
( CS = Low ,RAS , CAS , WE = High)  
This command is not a execution command. No operations begin or terminate by  
this command.  
BA0, BA1  
(Bank select)  
A10  
Add  
Fig. 9 No operation  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Feb. 2008  
Revision: 2.4 18/47  
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