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M12L64164A-5TIG 参数 Datasheet PDF下载

M12L64164A-5TIG图片预览
型号: M12L64164A-5TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 821 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L64164A  
Operation Temperature Condition -40°C~85°C  
Self refresh entry command  
CLK  
CKE  
( CS ,RAS , CAS , CKE = Low , WE = High)  
CS  
After the command execution, self refresh operation continues while CKE  
remains low. When CKE goes to high, the M12L64164A exits the self refresh mode.  
During self refresh mode, refresh interval and refresh operation are performed  
internally, so there is no need for external control.  
RAS  
CAS  
Before executing self refresh, all banks must be precharged.  
WE  
A12, A13  
(Bank select)  
A10  
Add  
Fig. 7 Self refresh entry  
command  
CLK  
CKE  
Burst stop command  
H
CS  
RAS  
CAS  
( CS , WE = Low, RAS , CAS = High)  
This command terminates the current burst operation.  
Burst stop is valid at every burst length.  
WE  
A12, A13  
(Bank select)  
A10  
Add  
Fig. 8 Burst stop command  
CLK  
No operation  
CKE  
H
( CS = Low ,RAS , CAS , WE = High)  
CS  
RAS  
CAS  
This command is not a execution command. No operations begin or terminate by  
this command.  
WE  
A12, A13  
(Bank select)  
A10  
Add  
Fig. 9 No operation  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Dec. 2007  
Revision: 1.2 16/45