ESMT
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = -25 to 85
°
C
PARAMETER
Operating Current
(One Bank Active)
SYMBOL
TEST CONDITION
Burst Length = 1, t
RC
≥
t
RC(min)
, I
OL
= 0 mA,
tcc = tcc(min)
CKE
≤
V
IL(max)
, tcc = tcc(min)
CKE & CLK
≤
V
IL(max)
, tcc =
∞
CKE
≥
V
IH(min)
, CS
≤
V
IH(min)
, tcc = tcc(min)
Input signals are changed one time during 2CLK
CKE
≥
V
IH(min)
, CLK
≤
V
IL(max)
, tcc =
∞
input signals are stable
CKE
≤
V
IL(max)
, tcc = tcc(min)
CKE & CLK
≤
V
IL(max)
, tcc =
∞
CKE
≥
V
IH(min)
, CS
≥
V
IH(min)
, tcc = tcc(min)
Input signals are changed one time during 2CLK
CKE
≥
V
IH(min)
, CLK
≤
V
IL(max)
, tcc =
∞
input signals are stable
I
OL
= 0 mA, Page Burst, All Bank active
Burst Length = 4, CAS Latency = 3
t
RC
≥
t
RC(min)
, t
CC
= tcc(min)
CKE
≤
0.2V
150
180
1
M12L64164A
Operation temperature condition -25℃ ~ 85℃
VERSION
-6
110
2
1
20
-7
100
UNIT
NOTE
I
CC1
mA
mA
1,2
I
CC2P
Precharge Standby Current
in power-down mode
I
CC2PS
Precharge Standby Current
in non power-down mode
I
CC2N
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
I
CC4
I
CC5
I
CC6
mA
15
10
10
30
25
140
mA
mA
mA
mA
mA
1,2
mA
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Note :
1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2004
Revision: 0.1
4/44
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
