ESMT
SDRAM
M12L64164A
Operation Temperature Condition -40°C~85°C
1M x 16 Bit x 4 Banks
Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
DQM for masking
Auto & self refresh
15.6
μ
s refresh interval
ORDERING INFORMATION
PRODUCT NO.
M12L64164A-5TIG
M12L64164A-6TIG
M12L64164A-7TIG
M12L64164A-5BIG
M12L64164A-6BIG
M12L64164A-7BIG
MAX FREQ. PACKAGE Comments
200MHz
166MHz
143MHz
200MHz
166MHz
143MHz
54 TSOP II
54 TSOP II
54 TSOP II
54 VBGA
54 VBGA
54 VBGA
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
GENERAL DESCRIPTION
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by
16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high performance memory system applications.
PIN ASSIGNMENT
Top View
V
DD
DQ 0
V
D D Q
DQ 1
DQ 2
V
S SQ
DQ 3
DQ 4
V
D D Q
DQ 5
DQ 6
V
S SQ
DQ 7
V
DD
LDQ M
WE
C AS
R AS
CS
A
13
A
12
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
S SQ
DQ14
DQ13
V
D D Q
DQ12
DQ11
V
S SQ
DQ10
DQ 9
V
D D Q
DQ 8
V
SS
NC
UDQM
CLK
C KE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
1
A
VSS
2
DQ15
54 Ball FVBGA (8mmx8mm)
3
VSSQ
4
5
6
7
VDDQ
8
DQ0
9
VDD
B
DQ14
DQ13
VDDQ
VSSQ
DQ2
DQ1
C
DQ12
DQ11
VSSQ
VDDQ
DQ4
DQ3
D
DQ10
DQ9
VDDQ
VSSQ
DQ6
DQ5
E
DQ8
NC
VSS
VDD
LDQM
DQ7
F
UDQM
CLK
CKE
CAS
RAS
WE
G
NC
A11
A9
A13
A12
CS
H
A8
A7
A6
A0
A1
A10
J
VSS
A5
A4
A3
A2
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date:
Dec.
2007
Revision: 1.2
2/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
