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M12L64322A2U 参数 Datasheet PDF下载

M12L64322A2U图片预览
型号: M12L64322A2U
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32位×4银行 [512K x 32 Bit x 4 Banks]
分类和应用:
文件页数/大小: 46 页 / 811 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
BLOCK DIAGRAM
CLK
CKE
Address
Mode
Register
Clock
Generator
Bank D
Bank C
Bank B
Row
Address
Buffer
&
Refresh
Counter
Row Decoder
M12L64322A (2U)
Bank A
Sense Amplifier
Command Decoder
Control Logic
CS
RAS
CAS
WE
Data Control Circuit
Input & Output
Buffer
Latch Circuit
Column
Address
Buffer
&
Refresh
Counter
DQM0~3
Column Decoder
DQ
PIN DESCRIPTION
PIN
CLK
CS
CKE
A0 ~ A10
BA0 , BA1
RAS
NAME
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
INPUT FUNCTION
Active on the positive going edge to sample all inputs
Disables or enables device operation by masking or enabling all inputs
except CLK, CKE and DQM0-3.
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior new command.
Disable input buffers for power down in standby.
Row / column address are multiplexed on the same pins.
Row address : RA0~RA10, column address : CA0~CA7
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
Latches row addresses on the positive going edge of the CLK with
Row Address Strobe
RAS low.
Enables row access & precharge.
Latches column address on the positive going edge of the CLK with
CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS ,
WE
active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active.
Data inputs / outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
This pin is recommended to be left No Connection on the device.
CAS
Column Address Strobe
WE
Write Enable
Data Input / Output Mask
Data Input / Output
Power Supply / Ground
Data Output Power /
Ground
No Connection
DQM0~3
DQ0 ~ DQ31
V
DD
/ V
SS
V
DDQ
/ V
SSQ
NC
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2010
Revision: 1.0
3/46