ESMT
M12L64164A (2Y)
Note:
1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active @ read/write are controlled by BA0, BA1.
BA0
BA1
Active & Read/Write
Bank A
0
0
1
1
0
1
0
1
Bank B
Bank C
Bank D
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
A10/AP
BA0
0
BA1
0
Operating
Disable auto precharge, leave A bank active at end of burst.
Disable auto precharge, leave B bank active at end of burst.
Disable auto precharge, leave C bank active at end of burst.
Disable auto precharge, leave D bank active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Enable auto precharge, precharge bank C at end of burst.
Enable auto precharge, precharge bank D at end of burst.
0
1
0
1
0
1
1
0
0
0
1
1
1
0
1
1
4. A10/AP and BA0, BA1 control bank precharge when precharge is asserted.
A10/AP
BA0
0
BA1
0
Precharge
Bank A
0
0
0
0
1
0
1
Bank B
1
0
Bank C
1
1
Bank D
X
X
All Banks
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2012
Revision: 1.1 28/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
