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M12L64164A-7BG2Y 参数 Datasheet PDF下载

M12L64164A-7BG2Y图片预览
型号: M12L64164A-7BG2Y
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行 [1M x 16 Bit x 4 Banks]
分类和应用:
文件页数/大小: 45 页 / 1260 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L64164A (2Y)  
Self refresh entry command  
( CS ,RAS , CAS , CKE = Low , WE = High)  
After the command execution, self refresh operation continues while CKE  
remains low. When CKE goes to high, the M12L64164A exits the self refresh mode.  
During self refresh mode, refresh interval and refresh operation are performed  
internally, so there is no need for external control.  
Before executing self refresh, all banks must be precharged.  
Burst stop command  
( CS , WE = Low, RAS , CAS = High)  
This command terminates the current burst operation.  
Burst stop is valid at every burst length.  
No operation  
( CS = Low,RAS , CAS , WE = High)  
This command is not an execution command. No operations begin or terminate  
by this command.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May 2012  
Revision: 1.1  
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